The effect of different ge concentration on the characteristics of strain silicon MOSFET
Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon germanium (SiGe).
Saved in:
Main Authors: | Jin, Wong Yah, Ismail, Razali |
---|---|
Format: | Conference or Workshop Item |
Published: |
2007
|
Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/14523/ |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Characterization of strained silicon MOSFET using semiconductor TCAD tools
by: Wong, Yah Jin, et al.
Published: (2006) -
Impact of strain on electrical performance of Silicon Nanowire MOSFET
by: A. Hamid, Fatimah, et al.
Published: (2017) -
Process and Characterization of Strained Silicon MOSFET Incorporating Dielectric Pocket (SDP-MOSFET)
by: Mohammed Napiah, Zul Atfyi Fauzan, et al.
Published: (2011) -
Characterization of vertical strained SiGe impact ionization MOSFET for ultra-sensitive biosensor application
by: Saad, Ismail, et al.
Published: (2014) -
Numerical study of carrier velocity for p-type strained silicon MOSFET
by: Heong, Y. W., et al.
Published: (2009)