Current–voltage characteristics of a silicon nanowire transistor

The nanowires and nanotubes are being considered as the best candidates for high-speed applications. It is shown that the high mobility does not always lead to higher carrier velocity. The ultimate drift velocity due to the high-electric-field streaming are based on the asymmetrical distribution fun...

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Bibliographic Details
Main Authors: Taghi Ahmadi, Mohammad, Houg Lau, Hui, Ismail, Razali, Arora, Vijay K.
Format: Article
Published: Elsevier 2009
Subjects:
Online Access:http://eprints.utm.my/id/eprint/13297/
http://dx.doi.org/10.1016/j.mejo.2008.06.060
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