The effect of different ge concentration on the characteristics of strain silicon MOSFET

• Main Authors: Jin, Wong Yah, Ismail, Razali
• Format: Conference or Workshop Item
• Published: 2007
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/14523/

Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon germanium (SiGe).