Radiation-induced degradation of silicon carbide MOSFETs: A review

• Main Authors: Baba, Tamana, Ahmed Siddiqui, Naseeb, Bte Saidin, Norazlina, Md Yusoff, Siti Harwani, Abdul Sani, Siti Fairus, Abdul Karim, Julia, Hasbullah, Nurul Fadzlin
• Format: Article
• Published: Elsevier Ltd 2024
• Subjects: QA75 Electronic computers. Computer science; QC Physics; TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.um.edu.my/44885/

Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have gained significant attention due to their ability to achieve lower on-resistance, reduced switching losses, and higher switching speeds. However, when exposed to radiation-rich environments, SiC MOSFETs can exper...