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The effect of different ge concentration on the characteristics of strain silicon MOSFET

Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon germanium (SiGe).

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Bibliographic Details
Main Authors: Jin, Wong Yah, Ismail, Razali
Format: Conference or Workshop Item
Published: 2007
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/14523/
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spelling my.utm.145232017-08-06T00:17:35Z http://eprints.utm.my/id/eprint/14523/ The effect of different ge concentration on the characteristics of strain silicon MOSFET Jin, Wong Yah Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon germanium (SiGe). 2007 Conference or Workshop Item PeerReviewed Jin, Wong Yah and Ismail, Razali (2007) The effect of different ge concentration on the characteristics of strain silicon MOSFET. In: 23rd Regional Conference of Solid State Science & Technology (RCSST), 2007, Hyatt Regency Hotel, Johor Bahru.
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Jin, Wong Yah
Ismail, Razali
The effect of different ge concentration on the characteristics of strain silicon MOSFET
description Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon germanium (SiGe).
format Conference or Workshop Item
author Jin, Wong Yah
Ismail, Razali
author_facet Jin, Wong Yah
Ismail, Razali
author_sort Jin, Wong Yah
title The effect of different ge concentration on the characteristics of strain silicon MOSFET
title_short The effect of different ge concentration on the characteristics of strain silicon MOSFET
title_full The effect of different ge concentration on the characteristics of strain silicon MOSFET
title_fullStr The effect of different ge concentration on the characteristics of strain silicon MOSFET
title_full_unstemmed The effect of different ge concentration on the characteristics of strain silicon MOSFET
title_sort effect of different ge concentration on the characteristics of strain silicon mosfet
publishDate 2007
url http://eprints.utm.my/id/eprint/14523/
_version_ 1643646414263156736
score 13.18916

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