Radiation-induced degradation of silicon carbide MOSFETs – a review

• Main Authors: Baba, Tamana, Siddiqui, Naseeb Ahmed, Saidin, Norazlina, Md Yusoff, Siti Harwani, Abdul Sani, Siti Fairus, Abdul Karim, Julia, Hasbullah, Nurul Fadzlin
• Format: Article
• Language: English; English
• Published: Elsevier 2024
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://irep.iium.edu.my/109675/1/Radiation_nduced_degradation_of_silicon_carbide_MOSFETs_A_review.pdf; http://irep.iium.edu.my/109675/7/109675_Radiation-induced%20degradation_SCOPUS.pdf; http://irep.iium.edu.my/109675/; https://www.sciencedirect.com/science/article/abs/pii/S0921510723008383

Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have gained significant attention due to their ability to achieve lower on-resistance, reduced switching losses, and higher switching speeds. However, when exposed to radiation-rich environments, SiC MOSFETs can experi...