Explicit charge-based model for strained-silicon gate-all-around mosfet including quantum and short channel effects

• Main Author: Abd. Hamid, Fatimah Khairiah
• Format: Thesis
• Language: English
• Published: 2020
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/99521/1/FatimahKhairiahAbdPSKE2020.pdf.pdf; http://eprints.utm.my/id/eprint/99521/; http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:144977

In the recent development of advanced nanoelectronic devices, strain application on silicon Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been identified as a key factor towards the improvement of device performance. Strainedsilicon is preferred due to less impact of the short chann...