Performance analysis of single and dual channel vertical strained SiGe impact ionization MOSFET (VESIMOS)

• Main Authors: Saad, I., Seng, B., Hamzah, Z., Bolong, N., Anuar, K., Ghosh, B., Ismail, R.
• Format: Conference or Workshop Item
• Language: English
• Published: 2015
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/59410/1/RazaliIsmail2015_PerformanceAnalysisofSingleandDualChannel.pdf; http://eprints.utm.my/id/eprint/59410/; http://dx.doi.org/10.1109/SCOReD.2013.7002588

In this work, single and dual channel SiGe layer for Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET (VESIMOS) has been successfully analyzed. Presence of the SiGe channel, it improved the I ON /I OFF ratio, subthreshold slope for the Dual Channel VESIMOS. Germanium has high impa...