Numerical study of carrier velocity for p-type strained silicon MOSFET

• Main Authors: Heong, Y. W., Ahmadi, M. T., Suseno, J. E., Ismail, R.
• Format: Book Section
• Published: The Nano Science and Technology Institute (NSTI) 2009
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/13023/

Strained induced in the silicon channel layer provides lower effective mass and suppresses intervalley scattering. In this paper, a numerical study of carrier concentration for P-type strained Silicon MOS is presented. Density of state proportion of Fermi-Dirac integral that covers the carrier stati...