Performance analysis of junctionless multi-bridge channel FET with strained SiGe application

• Main Authors: Affandi, S. Afidah, Alias, N. Ezaila, Hamzah, Afiq, Tan, M. L Peng, Hussin, Hanim
• Format: Conference or Workshop Item
• Published: 2022
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/98626/; http://dx.doi.org/10.1109/ICSE56004.2022.9863083

In this work, a 12 nm 3-Dimensional (3D) strained Junctionless (JL) Multi-Bridge Channel Field Effect Transistor (MBCFET) with different Germanium (Ge) mole fractions from 0.1 to 0.4 are presented. The strain used in this work is Silicon-Germanium (SiGe) which is applied in between the channels of M...