Scaling of vertical and lateral MOSFET in nanometer regime

• Main Authors: Saad, Ismail, Sulaiman, Ima, Ismail, Razali
• Format: Conference or Workshop Item
• Published: 2007
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/14408/

The Metal Oxide Semiconductor Field Effect Transistor, or MOSFET for short, has an extremely high input gate resistance with the current flowing through the channel between the source and drain being controlled by the gate voltage.