Characterization of Ge nanostructures embedded inside porous silicon for photonics application

In this work we prepared germanium nanostructures by means of filling the material inside porous silicon (PS) using conventional and cost effective technique, thermal evaporator. The PS acts as patterned substrate. It was prepared by anodization of silicon wafer in ethanoic hydrofluoric acid (HF). A...

Full description

Saved in:
Bibliographic Details
Main Authors: Abd. Rahim, Alhan Farhanah, Hashim, Md. Roslan, Ali Al Obaidi, Nihad K.
Format: Article
Published: Penerbit Universiti Kebangsaan Malaysia 2011
Subjects:
Online Access:http://eprints.utm.my/id/eprint/28813/
http://www.ukm.my/jsm/pdf_files/SM-PDF-40-1-2011/02%20Abd%20Rahim.pdf
Tags: Add Tag
No Tags, Be the first to tag this record!