Scaling and numerical simulation analysis of 50 nm MOSFET incorporating dielectric pocket (DP-MOSFET)

• Main Authors: M. N., Zul Atfyi Fauzan, Saad, Ismail, Ismail, Razali
• Format: Article
• Language: English
• Published: Malaysian Solid State Science and Technology Society 2008
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/8612/1/ZAFauzan2008-Scaling_And_Numerical_Simulation_Analysis.pdf; http://eprints.utm.my/id/eprint/8612/; http://www.mass-malaysia.net/journal

Characterization of a metal-oxide-semiconductor field effect transistor (MOSFET)incorporating dielectric pocket (DP) for suppression of short-channel effect (SCE) was demonstrated by using numerical simulation. The DP was incorporated between the channel and source/drain of planar MOSFET and was sca...