A study of 3-D Zinc Oxide nanowire field effect transistor with defect and interface charge density

Electrical characteristics of three-dimensional Zinc Oxide nanowire field effect transistor has been studied using 3-D TCAD tool. The device exhibited a good output performance that clearly shows linear and saturation mode with threshold voltage of 0.75V, field-effect mobility of ∼108 cm2/v.s and on...

Full description

Saved in:
Bibliographic Details
Main Authors: Khoo, W. H., Sultan, S. M.
Format: Conference or Workshop Item
Published: Institute of Electrical and Electronics Engineers Inc. 2016
Subjects:
Online Access:http://eprints.utm.my/id/eprint/73328/
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84966692459&doi=10.1109%2fSCORED.2015.7449373&partnerID=40&md5=b839906c1190633bfe1a7ca8882eb1a8
Tags: Add Tag
No Tags, Be the first to tag this record!

Similar Items