A study of 3-D Zinc Oxide nanowire field effect transistor with defect and interface charge density
Electrical characteristics of three-dimensional Zinc Oxide nanowire field effect transistor has been studied using 3-D TCAD tool. The device exhibited a good output performance that clearly shows linear and saturation mode with threshold voltage of 0.75V, field-effect mobility of ∼108 cm2/v.s and on...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Conference or Workshop Item |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2016
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/73328/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-84966692459&doi=10.1109%2fSCORED.2015.7449373&partnerID=40&md5=b839906c1190633bfe1a7ca8882eb1a8 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|