A study of 3-D Zinc Oxide nanowire field effect transistor with defect and interface charge density

• 主要な著者: Khoo, W. H., Sultan, S. M.
• フォーマット: Conference or Workshop Item
• 出版事項: Institute of Electrical and Electronics Engineers Inc. 2016
• 主題: TK Electrical engineering. Electronics Nuclear engineering
• オンライン･アクセス: http://eprints.utm.my/id/eprint/73328/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-84966692459&doi=10.1109%2fSCORED.2015.7449373&partnerID=40&md5=b839906c1190633bfe1a7ca8882eb1a8

Electrical characteristics of three-dimensional Zinc Oxide nanowire field effect transistor has been studied using 3-D TCAD tool. The device exhibited a good output performance that clearly shows linear and saturation mode with threshold voltage of 0.75V, field-effect mobility of ∼108 cm2/v.s and on...