Compact device modelling of interface trap charges with quantum capacitance in mos2-based field-effect transistors
An effective way to obtain interface trap density in transition metal dichalcogenide field-effect transistors (FETs) via compact device modelling is presented in this study. A computationally efficient model is utilised to evaluate the interface trap charges in a MoS2-based FET device. This model im...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Published: |
Institute of Physics Publishing
2020
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/86542/ https://dx.doi.org/10.1088/1361-6641/ab74f2 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|