Optimization of n-channel silicon nanowire field effect transistor using Taguchi method

• Main Author: Wahab, Nurul Eryana
• Format: Thesis
• Language: English
• Published: 2018
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/78957/1/NurulEryanaWahabMFKE2018.pdf; http://eprints.utm.my/id/eprint/78957/; http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:108539

In the last few decades, the performance of electronics devices, especially the transistors have made tremendous progress thanks to the novel metal-oxidesemiconductor field-effect-transistor (MOSFET) devices structure like Silicon Nanowire FET (SNWFET). As the device is scaled down into nanometer re...