Effect of phosphate buffered saline solutions on top-down fabricated ZnO nanowire field effect transistor

• Main Authors: Sultan, S. M., De Planque, M. R. R., Ashburn, P., Chong, H. M. H.
• Format: Article
• Language: English
• Published: Hindawi Limited 2017
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/76517/1/SMSultan2017_EffectofPhosphateBufferedSalineSolutions.pdf; http://eprints.utm.my/id/eprint/76517/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-85042530754&doi=10.1155%2f2017%2f5413705&partnerID=40&md5=4a09eb0acb173ecffed3599ce1f58af6

ZnO based nanowire FETs have been fabricated by implementing a top-down approach, which uses optical photolithography, atomic layer deposition (ALD) of ZnO thin film, and anisotropic plasma etching. The effects of Phosphate Buffered Saline (PBS) solution on the surface of ZnO nanowire were investiga...