Comprehensive analysis of gate oxide short in junctionless fin field effect transistor

• Main Authors: Rahman, Md. Wahidur, Alias, N. Ezaila, Hamzah, Afiq, Tan, M. L. Peng, Kamisian, Izam
• Format: Conference or Workshop Item
• Published: 2022
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/98866/; http://dx.doi.org/10.1109/ICSE56004.2022.9863184

Junctionless (JL) FinFET is one of the most promising alternatives to FinFET and planar MOSFET for future performance enhancements. The complexity of the JL FinFET manufacturing process has prompted difficulties in reliable device testing. Gate oxide short (GOS) is one of the most common faults that...