Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors
This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behave...
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Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
Springer New York LLC
2014
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Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/52478/1/SuhanaMohamedSulthan2014_Effectofatomiclayer.pdf http://eprints.utm.my/id/eprint/52478/ http://dx.doi.org/10.1186/1556-276X-9-517 |
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