Performance evaluation of silicon nanowire gate-all-around field-effect transistors and their dependence of channel length and diameter

• Main Authors: Bahador, Siti Norazlin, Tan, Michael Loong Peng, Ismail, Razali
• Format: Article
• Published: American Scientific Publishers 2015
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/58790/; http://dx.doi.org/10.1166/sam.2015.2179

The performance of a semiconducting Silicon Nanowire (SiNW) Gate-All-Around (GAA) transistors as basic logic gates are assessed and tabulated for certain metric, against those of metal-oxide-semiconductor fieldeffect transistors (MOSFETs). Both SiNW and nano-MOSFET models agree considerably well wit...