Two-dimensional (2D) transition metal dichalcogenide semiconductor field-effect transistors: the interface trap density extraction and compact model

• Main Authors: Najam, Faraz, Loong, Michael Peng Tan, Ismail, Razali, Yun, Seop Yu
• Format: Article
• Language: English
• Published: IOP Publishing Ltd. 2015
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/55958/1/FarazNajam2015_TwoDimensionalTransitionMetalDichalcogenideSemiconductor.pdf; http://eprints.utm.my/id/eprint/55958/; http://dx.doi.org/10.1088/0268-1242/30/7/075010

A surface potential-based low-field drain current compact model is presented for two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductor field-effect transistors that takes into account the effect of interface trap states on device current-voltage (Ids-Vgs) characteristics and trans...