Temperature characteristics of silicon nanowire transistor depending on oxide thickness
Among various sensing and monitoring techniques, sensors based on field effect transistors (FETs) have attracted considerable attention from both industry and academia. Owing to their unique characteristics such as small size, light weight, low cost, flexibility, fast response, stability, and abilit...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2019
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| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/25347/1/Temperature%20characteristics%20of%20silicon%20nanowire%20transistor.pdf http://umpir.ump.edu.my/id/eprint/25347/ https://doi.org/10.21272/jnep.11(3).03027 https://doi.org/10.21272/jnep.11(3).03027 |
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