Phonon scattering effects in drain-current model of carbon nanotube and silicon nanowire field-effect transistors

• Main Authors: Chin, Huei Chaeng, Lim, Cheng Siong, Tan, Michael Loong Peng
• Format: Article
• Published: American Scientific Publishers 2016
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/71271/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-84959925824&doi=10.1166%2fsam.2016.2687&partnerID=40&md5=6568d434fb1d7cefa3eb54f08d8e99ff

Carbon nanotubes (CNTs) and silicon nanowires (Si NWs) are the potential candidate for the channel material in the next generation of transistors. Although previous works have shown that both CNT- and Si NW-based field-effect-transistors (FET) are able to deliver better performance than conventional...