Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography.
Anisotropic etching of silicon has been widely used in fabrication of MEMS devices for many years. In this work, TMAH and KOH with IPA are used to etch silicon nanowire transistor patterns.
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2010
|
| Subjects: | |
| Online Access: | http://eprints.usm.my/19500/1/International_Conference_on_Nanotechnology.pdf http://eprints.usm.my/19500/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|