Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor

• Main Authors: Arora, Vijay K., Tan, Michael L. P., Saad, Ismail, Ismail, Razali
• Format: Article
• Published: American Institute of Physics 2007
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/7500/; http://dx.doi.org/10.1063/1.2780058

The ballistic saturation velocity in a nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) is revealed to be limited to the Fermi velocity in a degenerately induced channel appropriate for the quasi-two-dimensional nature of the inverted channel. The saturation point drain velocity...