Vth and ILEAK Optimization using taguchi method at 32nm bilayer graphene PMOS
A 32nm top-gated bilayer Graphene PMOS transistor was optimized and analyzed to find the optimum value of performance parameters besides investigating the process parameter that affects the performance of the bilayer Graphene transistor the most. Firstly, ATHENA and ATLAS modules which can be found...
Saved in:
Main Authors: | Noor Faizah Z.A., Ahmad I., Ker P.J., Menon P.S., Afifah Maheran A.H. |
---|---|
Other Authors: | 56395444600 |
Format: | Article |
Published: |
Universiti Teknikal Malaysia Melaka
2023
|
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Vth and ILEAK Optimization using taguchi method at 32nm bilayer graphene PMOS
by: Noor Faizah, Z.A., et al.
Published: (2017) -
Process Characterization of 32nm Semi Analytical Bilayer Graphene-based MOSFET
by: Noor Faizah Z.A., et al.
Published: (2023) -
Statistical process modelling for 32nm high-K/metal gate PMOS device
by: Maheran, A.H.A., et al.
Published: (2017) -
Statistical process modelling for 32nm high-K/metal gate PMOS device
by: Maheran A.H.A., et al.
Published: (2023) -
Modelling of process parameters for 32nm PMOS transistor using Taguchi method
by: Elgomati, H.A., et al.
Published: (2017)