Application of Taguchi method in the optimization of process variation for 32nm CMOS technology

In this paper, we investigate the effect of four process parameters namely HALO implantation, compensation implantations, SiO2 thickness and silicide annealing time on threshold voltage (VTH) in complementary metal oxide semiconductor (CMOS) technology. The setting of process parameters were determi...

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Bibliographic Details
Main Authors: Elgomati H.A., Majlis B.Y., Ahmad I., Salehuddin F., Hamid F.A., Zaharim A., Apte P.R.
Other Authors: 36536722700
Format: Article
Published: 2023
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