Statistical modelling of 14nm n-types MOSFET
This paper focuses on virtual modelling and optimization of 14nm n-types planar MOSFET. Here, high-k dielectric and metal gate were used where the high-k material is Hafnium Dioxide (HfO2) and the metal gate is Tungsten Silicide (WSi2). 36 simulations of Taguchi L9 Orthogonal Array method were appli...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | en_US |
| Published: |
2017
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