Process parameter optimisation for minimum leakage current in a 22nm p-type MOSFET using Taguchi method

In this research paper, the effects of variation on the process parameters were optimised while designing a nano-scaled p-type MOSFET (metal-oxide-semiconductor field-effect transistor) planar device for 22 nm technology. The aim of this procedure is to meet the minimum leakage current (IOFF) by opt...

Full description

Saved in:
Bibliographic Details
Main Authors: Afifah Maheran, A.H., Menon, P.S., Ahmad, I., Salehuddin, F., Mohd Zain, A.S.
Format:
Published: 2017
Online Access:http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5187
Tags: Add Tag
No Tags, Be the first to tag this record!