Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi method
In this article, Taguchi orthogonal array method was used to optimize the process parameters during the design of a 22 nm n-type Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in order to decrease the leakage current (ILEAK) of the device. Titanium dioxide (TiO2) was used as the dielectr...
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| Main Authors: | , , , |
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2017
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| Online Access: | http://dspace.uniten.edu.my:80/jspui/handle/123456789/5207 |
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