Optimization of process parameter variability in 45 nm PMOS device using Taguchi method

• Main Authors: Salehuddin, F., Ahmad, I., Hamid, F.A., Zaharim, A.
• 格式: Article
• 出版: 2017
• 在线阅读: http://dspace.uniten.edu.my:80/jspui/handle/123456789/5241

This study reports on an investigation of the effect and optimization of process parameter variability on poly sheet resistance (Rs) and leakage current (ILeak) in 45 nm PMOS device. The experimental studies were conducted under varying four process parameters, namely Halo implantation, Source/Drain...