Modelling of nanoscale MOSFET performance in the velocity saturation region

Velocity saturation as a function of temperature and drain voltage for n-channel MOSFET is investigated. The combination of an existing current-voltage (I-V) model, drain source resistance model and a more precise mobility derivation gives an accurate representation of velocity saturation as a funct...

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Bibliographic Details
Main Authors: Tan, Micheal Loong Peng, Ismail, Razali
Format: Article
Language:English
English
Published: Faculty of Electrical Engineering 2007
Subjects:
Online Access:http://eprints.utm.my/id/eprint/8071/1/RazaliIsmail2007_ModelingofNanoscaleMOSFETPerformance.pdf
http://eprints.utm.my/id/eprint/8071/3/paper7june07_michael_tan.pdf
http://eprints.utm.my/id/eprint/8071/
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