Current-Voltage Analysis of Nanoscale Planar and Vertical MOSFET Incorporating Dielectric Pocket

• Main Authors: Mohammed Napiah, Zul Atfyi Fauzan, Ja'afar, Abd Shukur
• Format: Article
• Language: English
• Published: Penerbit Universiti, UTeM 2011
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utem.edu.my/id/eprint/8532/1/V3N2-05%2841-46%29.pdf; http://eprints.utem.edu.my/id/eprint/8532/

Characterization of nanoscale planar and vertical metal-oxide-semiconductor field effect transistor incorporating dielectric pocket (DP-MOSFET) is demonstrated by using numerical simulation. Vertical MOSFET is one solution to shrink the channel length (Lg) into nanometer regime. The comparison betwe...