Invited paper: modeling of nanoscale MOSFET using MATLAB
Quantum and high-field effects present in a nanoscale MOSFET are modeled and data processed using MATLAB. The drift response to the electric field is modeled after the intrinsic velocity that is shown to be the ultimate limit to the saturation velocity in a very high electric field. The ballistic in...
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| Format: | Book Section |
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Institute of Electrical and Electronics Engineers
2009
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| Online Access: | http://eprints.utm.my/id/eprint/12910/ http://dx.doi.org/10.1109/AMS.2009.21 |
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