A model for length of saturation velocity region in double-gate graphene nanoribbon transistors

• Main Authors: Ghadiry, Mahdiar Hossein, Nadi S., M., Ahmadi, Mohammad Taghi, Abd. Manaf, Asrulnizam
• Format: Article
• Published: Elsevier Limited 2011
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/28584/; http://dx.doi.org/10.1016/j.microrel.2011.07.009

Length of saturation region (LVSR) as an important parameter in nanoscale devices, which controls the drain breakdown voltage is in our focus. This paper presents three models for surface potential, surface electric field and LVSR in double-gate Graphene nanoribbon transistors. The Poisson equation...