Explicit continuous charge-based compact model of surrounding gate MOSFET (SRGMOSFET) with smooth transition between partially-depleted to fully-depleted operation

• Main Authors: Hamzah, Afiq, Alias, N. Ezaila, Tan, Michael Loong Peng, Ali Hosseingholipourasl, Ali Hosseingholipourasl, Ismail, Razali
• Format: Article
• Published: IOP Publishing Ltd 2020
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/86971/; http://dx.doi.org/10.1088/1361-6641/ab6bf8

A charge-based compact model that includes the dynamic depletion behavior for arbitrary doped surrounding gate MOSFET (SRGMOSFET) is presented in this paper. The one-dimensional Poisson's equation is first solved to obtain the continuous explicit solution of the mobile charge density and drain...