Device and Transistor Level Circuit Performance Analysis of Nanoscale Mosfet
When nano-MOSFET structural dimension is downscaled to nanometer regime, quantum effects become obvious. This small channel length nano-MOSFET reduces electron transit time from source to drain. Owing to small dimension, its smaller capacitance would result lower power dissipation. When applying th...
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| Format: | Final Year Project / Dissertation / Thesis |
| Published: |
2019
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| Online Access: | http://eprints.utar.edu.my/3602/1/EGA%2D2019%2D0909071%2D1.pdf http://eprints.utar.edu.my/3602/ |
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