Physics-based simulation of carrier velocity in 2-dimensional p-type MOSFET

• Main Authors: Riyadi, Munawar Agus, Ahmadi, Mohammad Taghi, Suseno, Jatmiko E., Siew, Kang Eng, Saad, Ismail, Ismail, Razali, Arora, Vijay K.
• Format: Book Section
• Published: Institute of Electrical and Electronics Engineers 2009
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/13053/; http://dx.doi.org/10.1109/AMS.2009.26

The carrier velocity for 2-dimensional (2-D) p-type nanostructure was simulated in this paper. According to the energy band diagram, the effective mass (m*) in the p-type silicon is mostly dominated by heavy hole because of the large gap between heavy hole and light hole in k = 0. The carrier concen...