Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained...

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Bibliographic Details
Main Authors: Tan, Michael Loong Peng, Lentaris, Georgios, Amaratunga, Gehan A. J.
Format: Article
Language:English
Published: Springer 2012
Subjects:
Online Access:http://eprints.utm.my/id/eprint/33445/1/MichaelLoongPengTan2012_DeviceandCircuit-LevelPerformanceofCarbon.pdf
http://eprints.utm.my/id/eprint/33445/
http://dx.doi.org/10.1186/1556-276X-7-467
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