Mobility diminution in a nano-MOSFET due to carrier injection from the ohmic contacts
The mobility is being ballistic when the mean free path in a nanoscale transistor exceeds the channel length. The ballistic mobility is modeled and interpreted by analyzing transient velocity response to the electric field. The new model includes the transit-time delay that may become comparable to...
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Main Authors: | Riyadi, M. A., Tan, Michael Loong Peng, Hashim, Abdul Manaf, Arora, Vijay Kumar |
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Format: | Book Section |
Published: |
American Institute of Physics.
2011
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Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/29361/ http://dx.doi.org/10.1063/1.3586978 |
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