The channel mobility degradation in a nanoscale metal-oxide-semiconductor field effect transistor due to injection from the ballistic contacts
The ballistic mobility degradation is shown to originate from nonstationary (transient) transport in response to the ohmic electric field. The source and drain reservoirs launch electrons into the channel with injection velocity transiting the channel with finite ballisticity defined as the probabil...
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| Main Authors: | , |
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| Format: | Article |
| Published: |
American Institute of Physics
2011
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/29481/ http://dx.doi.org/10.1063/1.3554623 |
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