Scattering-limited and ballistic transport in a nano-CMOS circuit

The mobility and saturation velocity in the nanoscale metal oxide semiconductor field effect transistor (MOSFET) are revealed to be ballistic; the former in a channel whose length is smaller than the scattering-limited mean free path. The drain-end carrier velocity is smaller than the ultimate satur...

Full description

Saved in:
Bibliographic Details
Main Authors: Saad, Ismail, Tan, Micheal Loong Peng, Chi, Aaron Enn Lee, Ismail, Razali, Arora, Vijay Kumar
Format: Article
Language:English
Published: Elsevier 2008
Subjects:
Online Access:http://eprints.utm.my/id/eprint/7501/3/RazaliIsmail2008_ScatteringlimitedandBallisticTransport.pdf
http://eprints.utm.my/id/eprint/7501/
http://dx.doi.org/10.1016/j.mejo.2008.06.049
Tags: Add Tag
No Tags, Be the first to tag this record!