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Mobility diminution in a nano-MOSFET due to carrier injection from the ohmic contacts

The mobility is being ballistic when the mean free path in a nanoscale transistor exceeds the channel length. The ballistic mobility is modeled and interpreted by analyzing transient velocity response to the electric field. The new model includes the transit-time delay that may become comparable to...

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Main Authors: Riyadi, M. A., Tan, Michael Loong Peng, Hashim, Abdul Manaf, Arora, Vijay Kumar
Format: Book Section
Published: American Institute of Physics. 2011
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/29361/
http://dx.doi.org/10.1063/1.3586978
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spelling my.utm.293612017-02-04T08:44:30Z http://eprints.utm.my/id/eprint/29361/ Mobility diminution in a nano-MOSFET due to carrier injection from the ohmic contacts Riyadi, M. A. Tan, Michael Loong Peng Hashim, Abdul Manaf Arora, Vijay Kumar TK Electrical engineering. Electronics Nuclear engineering The mobility is being ballistic when the mean free path in a nanoscale transistor exceeds the channel length. The ballistic mobility is modeled and interpreted by analyzing transient velocity response to the electric field. The new model includes the transit-time delay that may become comparable to or smaller than the scattering-limited mean free time. For an applied voltage of 0.1 V or lower, the transient response effect degrades the mobility below its long-length limit. The model includes the carrier injection from the Ohmic contacts which can explain the mobility diminution in the nanoscale MOSFET. As a result, the new model shows excellent agreement with the ballistic mobility experimental data. American Institute of Physics. 2011 Book Section PeerReviewed Riyadi, M. A. and Tan, Michael Loong Peng and Hashim, Abdul Manaf and Arora, Vijay Kumar (2011) Mobility diminution in a nano-MOSFET due to carrier injection from the ohmic contacts. In: AIP Conference Proceedings. American Institute of Physics., pp. 169-174. ISBN 978-073540903-3 http://dx.doi.org/10.1063/1.3586978 10.1063/1.3586978
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Riyadi, M. A.
Tan, Michael Loong Peng
Hashim, Abdul Manaf
Arora, Vijay Kumar
Mobility diminution in a nano-MOSFET due to carrier injection from the ohmic contacts
description The mobility is being ballistic when the mean free path in a nanoscale transistor exceeds the channel length. The ballistic mobility is modeled and interpreted by analyzing transient velocity response to the electric field. The new model includes the transit-time delay that may become comparable to or smaller than the scattering-limited mean free time. For an applied voltage of 0.1 V or lower, the transient response effect degrades the mobility below its long-length limit. The model includes the carrier injection from the Ohmic contacts which can explain the mobility diminution in the nanoscale MOSFET. As a result, the new model shows excellent agreement with the ballistic mobility experimental data.
format Book Section
author Riyadi, M. A.
Tan, Michael Loong Peng
Hashim, Abdul Manaf
Arora, Vijay Kumar
author_facet Riyadi, M. A.
Tan, Michael Loong Peng
Hashim, Abdul Manaf
Arora, Vijay Kumar
author_sort Riyadi, M. A.
title Mobility diminution in a nano-MOSFET due to carrier injection from the ohmic contacts
title_short Mobility diminution in a nano-MOSFET due to carrier injection from the ohmic contacts
title_full Mobility diminution in a nano-MOSFET due to carrier injection from the ohmic contacts
title_fullStr Mobility diminution in a nano-MOSFET due to carrier injection from the ohmic contacts
title_full_unstemmed Mobility diminution in a nano-MOSFET due to carrier injection from the ohmic contacts
title_sort mobility diminution in a nano-mosfet due to carrier injection from the ohmic contacts
publisher American Institute of Physics.
publishDate 2011
url http://eprints.utm.my/id/eprint/29361/
http://dx.doi.org/10.1063/1.3586978
_version_ 1643648283604680704
score 13.160551

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