Effects of Post Annealing Treatment on the Characteristics of Ohmic Contacts on n-type AIGaN
In this work, we investigate the thermal stability and surface morphology of Ti metal contact on unintentionally doped n-type aluminum gallium nitride (AIGaN). Different annealing temperatures (400C - 800C) and durations (1-30 minutes) are investigated, as thermally stable metal-semiconductor contac...
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| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2005
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| Subjects: | |
| Online Access: | http://eprints.usm.my/133/1/Effects_Of_Post_Annealing_Treatments_On_The_Characteristics_Of_Ohmic_Contacts_On_n_Type_AIGaN.pdf http://eprints.usm.my/133/ |
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