Enhanced device and circuit-level performance benchmarking of graphene nanoribbon field-effect transistor against a nano-MOSFET with interconnects

• Main Authors: Chin, Huei Chaeng, Lim, Cheng Siong, Wong, Weng Soon, Danapalasingam, Kumeresan A., Arora, Vijay K., Tan, Michael Loong Peng
• Format: Article
• Published: Hindawi Publishing Corporation 2014
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/52690/; http://dx.doi.org/10.1155/2014/879813

Comparative benchmarking of a graphene nanoribbon field-effect transistor (GNRFET) and a nanoscale metal-oxide-semiconductor field-effect transistor (nano-MOSFET) for applications in ultralarge-scale integration (ULSI) is reported. GNRFET is found to be distinctly superior in the circuit-level archi...