Mobility diminution in a nano-mosfet due to carrier injection from the ohmic contacts
The mobility is being ballistic when the mean free path in a nanoscale transistor exceeds the channel length. The ballistic mobility is modeled and interpreted by analyzing transient velocity response to the electric field. The new model includes the transit-time delay that may become comparable to...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Published: |
American Institute of Physics
2011
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/45046/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|