Mobility diminution in a nano-MOSFET due to carrier injection from the ohmic contacts
The mobility is being ballistic when the mean free path in a nanoscale transistor exceeds the channel length. The ballistic mobility is modeled and interpreted by analyzing transient velocity response to the electric field. The new model includes the transit-time delay that may become comparable to...
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| Main Authors: | , , , |
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| Format: | Book Section |
| Published: |
American Institute of Physics.
2011
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/29361/ http://dx.doi.org/10.1063/1.3586978 |
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| Summary: | The mobility is being ballistic when the mean free path in a nanoscale transistor exceeds the channel length. The ballistic mobility is modeled and interpreted by analyzing transient velocity response to the electric field. The new model includes the transit-time delay that may become comparable to or smaller than the scattering-limited mean free time. For an applied voltage of 0.1 V or lower, the transient response effect degrades the mobility below its long-length limit. The model includes the carrier injection from the Ohmic contacts which can explain the mobility diminution in the nanoscale MOSFET. As a result, the new model shows excellent agreement with the ballistic mobility experimental data. |
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