Performance characterization of schottky tunneling graphene field effect transistor at 60 nm gate length
A planar Graphene Field-Effect Transistor GFET performance with 60 nm gate length was evaluated in discovering new material to meet the relentless demand for higher performance-power saving features. The ATHENA and ATLAS modules of SILVACO TCAD simulation tool was employed to virtually design and as...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | en_US |
| Published: |
2017
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