Performance characterization of schottky tunneling Graphene Field Effect Transistor at 60 nm gate length

• Main Authors: Noor Faizah Zainul Abidin,, Ibrahim Ahmad,, Ker, Pin Jern, P. Susthitha Menon,
• Format: Article
• Language: English
• Published: Penerbit Universiti Kebangsaan Malaysia 2017
• Online Access: http://journalarticle.ukm.my/11126/1/11%20Noor%20Faizah.pdf; http://journalarticle.ukm.my/11126/; http://www.ukm.my/jsm/malay_journals/jilid46bil7_2017/KandunganJilid46Bil7_2017.html

A planar Graphene Field-Effect Transistor GFET performance with 60 nm gate length was evaluated in discovering new material to meet the relentless demand for higher performance-power saving features. The ATHENA and ATLAS modules of SILVACO TCAD simulation tool was employed to virtually design and as...